发明名称 METHOD FOR REGULATING NANOSCALE ELECTRON BEAM INDUCED DEPOSITIONS
摘要 The invention relates to a method and a device by which the electron beam induced deposition of non-volatile substances from a gaseous precursor substance (12) onto the surface of a substrate (8) can be regulated. According to the invention, a primary electron beam (2) is radiated in a controlled manner onto the surface of the substrate (8) and causes the production of secondary electrons. Said secondary electrons in turn trigger the reaction of the precursor substance for the deposition onto the surface of the substrate. The signal of a secondary electron detector (7) is used as a control signal for moving the primary electron beam (2). The signal of the secondary electron detector is recorded during the deposition process and allows for an immediate computer-based control and/or regulation of the primary electron beam and thus of the rate and local resolution of the deposition of the substance from the precursor substance onto the surface of the substrate.
申请公布号 WO2008059070(A3) 申请公布日期 2008.07.10
申请号 WO2007EP62524 申请日期 2007.11.19
申请人 CARL VON OSSIETZKY UNIVERSITAET OLDENBURG;WICH, THOMAS;LUTTERMANN, TIM 发明人 WICH, THOMAS;LUTTERMANN, TIM
分类号 H01J37/30;C23C16/48;H01J37/304;H01J37/305 主分类号 H01J37/30
代理机构 代理人
主权项
地址
您可能感兴趣的专利