FET, FERROELECTRIC MEMORY DEVICE, AND METHODS OF MANUFACTURING THE SAME

摘要

Disclosed herein are a metal-ferroelectric-metal-semiconductor (MFMS) field-effect transistor (FET), an MFMS-ferroelectric memory device, and methods of manufacturing the same. The FET and the ferroelectric memory device in accordance with the present invention include: a substrate 1 including source and drain regions 2 and 3, and a channel region 4 formed therebetween; a lower electrode layer 30 formed on the top of the channel region 4 of the substrate 1; a ferroelectric layer 31 formed on the lower electrode layer 30; and an upper electrode layer 32 formed on the ferroelectric layer 31. The ferroelectric layer 31 is composed of a mixture of an inorganic ferroelectric material or a solid solution thereof and an organic material or an organic ferroelectric material.