| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method, by which residues, scum or the like on a substrate obtained by carrying out a patterning of a film by using a hard mask are further reduced, in a method of manufacturing semiconductor devices such as FeRAM or the like including a process of carrying out the patterning of films such as a metal film, an insulating film or the like by using the hard mask. SOLUTION: The method of manufacturing the semiconductor device is provided with a prevention process, comprising the steps of:forming a hard mask 17a of nitride such as TiN through a sacrificial film 16 of alumina film on a first conductive film 15 consisting of IrO<SB>2</SB>which is set as a patterning object; carrying out a patterning of the first conductive film 15 in a region which is not covered with the hard mask 17a; removing the sacrificial film 16 by a wet processing using mixed liquor of ammonium fluoride, amide, organic acid, organic acid salts and water; and lifting the hard mask 17a from an upper part of the first conductive film 15 and sticking again the residues, the scums or the like which are stuck on a front surface of the hard mask 17a. COPYRIGHT: (C)2008,JPO&INPIT
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