| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device that has a field effect transistor in which the interface between a ferroelectric film and a dielectric film is a channel, and has superior memory characteristics. SOLUTION: The semiconductor storage device comprises: gate electrodes 12, 17 to which the voltage for controlling the polarization condition of a ferroelectric film 13 is applied; and a source and drain electrodes 15, 16 provided across the channel, for detecting current flowing in the channel, according to the polarization condition. The ferroelectric film 13 and dielectric film 14 comprise a laminated film that is formed consecutively, and the source and drain electrodes 15, 16 are provided in an opening 18, that is formed by performing etching, until at least the interface between the ferroelectric film 13 and dielectric film 14 is exposed. COPYRIGHT: (C)2008,JPO&INPIT
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