| 发明名称 |
Resistance random access memory and method of manufacturing the same |
| 摘要 |
Provided are a resistance random access memory including a resistance layer having a metal oxide and/or a metal ion dopant, which may be deposited at room temperature and which may have variable resistance characteristics, and a method of manufacturing the same.
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| 申请公布号 |
US2008164568(A1) |
申请公布日期 |
2008.07.10 |
| 申请号 |
US20070896007 |
申请日期 |
2007.08.29 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE MYOUNG-JAE;LEE EUN-HONG;PARK YOUNG-SOO |
| 分类号 |
H01L29/00;H01L21/20 |
主分类号 |
H01L29/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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