发明名称 |
NUCLEATION LAYER FOR THIN FILM METAL LAYER FORMATION |
摘要 |
A conductive film is formed on a flexible polymer support by applying a seed layer comprising gallium oxide, indium oxide, magnesium oxide, zinc oxide or mixture (including mixed oxides) thereof to the flexible polymer support, and applying an extensible, visible light-transmissive metal layer over the seed layer. The seed layer oxide desirably promotes deposition of the subsequently-applied metal layer in a more uniform or more dense fashion, or promotes earlier formation (viz., at a thinner applied thickness) of a continuous metal layer. The resulting films have high visible light transmittance and low electrical resistance. |
申请公布号 |
WO2008083308(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
WO2007US89095 |
申请日期 |
2007.12.28 |
申请人 |
3M INNOVATIVE PROPERTIES COMPANY;STOSS, WALTER,;BRIGHT, CLARK, I. |
发明人 |
STOSS, WALTER,;BRIGHT, CLARK, I. |
分类号 |
B32B15/00;B32B17/00 |
主分类号 |
B32B15/00 |
代理机构 |
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代理人 |
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地址 |
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