发明名称 NUCLEATION LAYER FOR THIN FILM METAL LAYER FORMATION
摘要 A conductive film is formed on a flexible polymer support by applying a seed layer comprising gallium oxide, indium oxide, magnesium oxide, zinc oxide or mixture (including mixed oxides) thereof to the flexible polymer support, and applying an extensible, visible light-transmissive metal layer over the seed layer. The seed layer oxide desirably promotes deposition of the subsequently-applied metal layer in a more uniform or more dense fashion, or promotes earlier formation (viz., at a thinner applied thickness) of a continuous metal layer. The resulting films have high visible light transmittance and low electrical resistance.
申请公布号 WO2008083308(A1) 申请公布日期 2008.07.10
申请号 WO2007US89095 申请日期 2007.12.28
申请人 3M INNOVATIVE PROPERTIES COMPANY;STOSS, WALTER,;BRIGHT, CLARK, I. 发明人 STOSS, WALTER,;BRIGHT, CLARK, I.
分类号 B32B15/00;B32B17/00 主分类号 B32B15/00
代理机构 代理人
主权项
地址