发明名称 Reverse oxidation post-growth process for tailored gain profile in solid-state devices
摘要 A laser rod is provided having a tailored gain profile such that the quality of the output beam is enhanced. The laser rod has a concentration of active substitutional ions that is relatively high at the center of the rod and decreases to the surface of the rod. The laser rod further has a concentration of pre-active laser ions that is relatively high at the surface of the rod and decreases to the center of the rod. Methods are disclosed for creating a layer of inactive laser species in the near surface region of a laser rod using substitutional dopant ions and for creating a laser rod with a tailored gain profile such that the quality of the output beam is enhanced.
申请公布号 US2008165817(A1) 申请公布日期 2008.07.10
申请号 US20060584695 申请日期 2006.10.20
申请人 RAYTHEON COMPANY 发明人 SUMIDA DAVID S.;KIRBY KEVIN W.
分类号 H01S3/16 主分类号 H01S3/16
代理机构 代理人
主权项
地址