发明名称 |
Reverse oxidation post-growth process for tailored gain profile in solid-state devices |
摘要 |
A laser rod is provided having a tailored gain profile such that the quality of the output beam is enhanced. The laser rod has a concentration of active substitutional ions that is relatively high at the center of the rod and decreases to the surface of the rod. The laser rod further has a concentration of pre-active laser ions that is relatively high at the surface of the rod and decreases to the center of the rod. Methods are disclosed for creating a layer of inactive laser species in the near surface region of a laser rod using substitutional dopant ions and for creating a laser rod with a tailored gain profile such that the quality of the output beam is enhanced.
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申请公布号 |
US2008165817(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20060584695 |
申请日期 |
2006.10.20 |
申请人 |
RAYTHEON COMPANY |
发明人 |
SUMIDA DAVID S.;KIRBY KEVIN W. |
分类号 |
H01S3/16 |
主分类号 |
H01S3/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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