FLASH MEMORY AND ASSOCIATED METHODS

摘要

In a method of operation, a flash memory cell is programmed, a word-line voltage is coupled to the flash memory cell, and a state of the flash memory cell is sensed at intervals to generate data to indicate a state of the flash memory cell. In a method of operation, a latch in a cache memory of a NAND flash memory is switched off, and the latch is initialized while the latch is switched off. A read voltage is coupled to a gate of a selected flash memory cell in the NAND flash memory where the selected flash memory cell is coupled to a bit-line, and the bit-line is coupled to an input of the latch while a voltage on the bit-line is changing.