| 摘要 |
A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR'COOH and a general formula ROR'OPO<SUB>3</SUB>H<SUB>2 </SUB>where R represents an alkyl group or an alkylphenyl group, R' represents a polyoxyethylene group, polyoxypropylene group, or poly(oxyethylene/oxypropylene) group. The pH of the polishing composition is 8 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device. |
