| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid-state image sensing device by which space between inorganic micro-lenses is set to 0.1μm or less and an aperture ratio is improved and to provide a high-sensitivity solid-state image sensing device. SOLUTION: The method for manufacturing the solid-state image sensing device is provided with a process for forming a silicon oxide film layer or a silicon nitride film layer by CVD above a photoelectric conversion part, a process for stacking a transparent resin layer on the above layer, a process for forming a lens mother die by using a photosensitive resin exhibiting thermal reflow properties and alkali solubility on the transparent resin layer and a process for dry etching the lens mother die and, transferring the pattern of the lens mother die to the silicon oxide film layer or the silicon nitride film layer through the transparent resin layer to form micro-lenses. In this case, the transparent resin is acrylic resin or phenol resin. COPYRIGHT: (C)2008,JPO&INPIT
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