发明名称 CRYSTAL GROWING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a crystal growing device reflecting sufficient radiation heat toward the contact area between a melt surface and a crucible without causing an excess cost. SOLUTION: When a crucible 3 storing fused silicon 2 is heated by a high frequency induction coil 7 as a heating means, a heat shield plate 11 reflecting the radiation heat from the surface of the fused silicon 2 is controlled to reflect the radiation heat from the surface of the fused silicon 2 to the contact area 2a, 2a' between the surface of the fused silicon 2 and the crucible 3. The heat shield plate 11 is movable. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008156203(A) 申请公布日期 2008.07.10
申请号 JP20070114766 申请日期 2007.04.24
申请人 SHARP CORP 发明人 IMANAKA TAKAO
分类号 C30B29/06;C01B33/02;C30B21/02;C30B21/06 主分类号 C30B29/06
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