| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor chip, which reduces the time required for plasma dicing, without causing a semiconductor wafer to break or so while being transferred prior to the plasma dicing, and improves the production efficiency of semiconductor chips. SOLUTION: A resist film 6 is formed on the back surface 1q of a ground semiconductor wafer 1, and then the portions 6a, 1b of margins for cutting 6a, 1b, 1c, 3a along a dicing line 2 are removed by a blade 13 which is the mechanical cutting means. The thickness t of the margin left, for cutting 1c in the thickness direction of the semiconductor wafer 1, is made small to a degree that enables the semiconductor wafer 1 to be transferred without trouble, and then all the margins left for cutting 1c, 3a are removed through plasma etching. COPYRIGHT: (C)2008,JPO&INPIT |
