| 摘要 |
The semiconductor comprises a channel layer including GaN, a barrier layer formed by laminating a first layer including Al<SUB>X</SUB>Ga<SUB>1-X</SUB>N (0.05<=X<=0.25) and a second layer including Al<SUB>Y</SUB>Ga<SUB>1-Y</SUB>N (0.20<=Y<=0.28, X<Y), source and drain electrodes provided spaced apart from each other on the barrier layer, and a gate electrode provided on the bottom of a ditch extending between the source and drain electrodes and formed with a depth starting from the top surface of the barrier layer reaching the first layer adjacent to the channel layer.
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