发明名称 |
Magnetic Memory and Manufacturing Method For the Same |
摘要 |
The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.
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申请公布号 |
US2008164502(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20050667834 |
申请日期 |
2005.11.16 |
申请人 |
NEC CORPORATION |
发明人 |
FUKUMOTO YOSHIYUKI;SUZUKI TETSUHIRO;SUEMITSU KATSUMI |
分类号 |
H01L27/00 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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