发明名称 |
METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon; a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film; and a step of performing first heat treatment to the silicon oxynitride film in N<SUB>2</SUB>O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.</p> |
申请公布号 |
WO2008081724(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
WO2007JP74483 |
申请日期 |
2007.12.20 |
申请人 |
TOKYO ELECTRON LIMITED;HONDA, MINORU;SATO, YOSHIHIRO;NAKANISHI, TOSHIO |
发明人 |
HONDA, MINORU;SATO, YOSHIHIRO;NAKANISHI, TOSHIO |
分类号 |
H01L21/318;H01L29/78 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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