| 摘要 |
PROBLEM TO BE SOLVED: To provide a high performance group III-V nitride compound semiconductor field effect transistor including no failure in an epitaxial layer formed of the group III-V nitride compound semiconductor, and to provide a method for manufacturing the transistor. SOLUTION: The group III-V nitride compound semiconductor MOS field effect transistor 1A includes the epitaxial layer 3 formed of the group III-V nitride compound semiconductor such as GaN, a couple of ohmic contact layers 8, 9 and a resurf layer 10 formed by a regrowth technology. Since both the ohmic contact layers 8, 9 and the resurf layer 10 are formed by the regrowth technology, no high-temperature treatment is required. Therefore, the ohmic contact layers 8, 9 and the resurf layer 10 can be formed without the occurrence of a failure in the epitaxial layer 3. COPYRIGHT: (C)2008,JPO&INPIT
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