| 摘要 |
The present invention provides a method of fabricating strained silicon channel MOS transistor, comprising providing a substrate, forming at least a gate structure on the substrate, forming a mask layer on the gate structure, performing an etching process to form two recesses corresponding to the gate structure within the substrate, performing a selective epitaxial growth (SEG) process to form an epitaxial layer in the recesses respectively, and performing an ion implantation process for the epitaxial layers to form a source/drain region.
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