FIELD EFFECT TRANSISTOR DEVICE, AND METHODS OF PRODUCTION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor transistor device having improved capability such as an MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an HEMT (High Electron Mobility Transistor) and the like. SOLUTION: The semiconductor transistor device being related to the invention comprises: a channel area (1), including a channel layer through which charge carriers can move when the transistor is turned on, in order to pass a current through the transistor; a source area (4) and a drain area (5), contacting the channel layer to provide current to and from the channel layer; a gate electrode (3), preferably provided with a gate dielectric (2) between the gate electrode and the channel layer, wherein the channel layer consists of a III-V material with the source and drain areas comprise SiGe (SixGe1-x, with x between 0 and 100%) arranged so that heterojunctions (30, 31) are present between a III-V material and SiGe, and the heterojunctions (30, 31) oriented so as to intersect with the gate dielectric (2) or the gate electrode. COPYRIGHT: (C)2008,JPO&INPIT