| 摘要 |
An organic transistor comprising source and drain electrodes; a gate electrode; an organic insulating layer between the gate electrode and the source and drain electrodes; and an organic semiconductive region between the insulating layer and the source and drain electrodes; wherein the organic semiconductive region comprises (a) a high mobility layer of an organic semiconductor and (b) a blocking layer of organic material positioned between the high mobility layer and the source and drain electrodes, in which the ionization potential of the organic material of the blocking layer exceeds the workfunction of the source and drain electrodes so as to inhibit charge injection from the source electrode into the blocking layer in the off-state.
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