| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a device by ensuring a sufficient contact surface of a source and by preventing generation of voids in a source electrode. SOLUTION: A gate electrode of polysilicon is formed in a trench. An interlayer insulating layer whose top surface is protruded is also formed in the trench. Further, a source electrode is so formed that it covers the surface of a semiconductor substrate and a part of it enters into the trench. Since the contact surface between the source region and the source electrode is increased, the on-state resistance can be reduced. Also, since the top surface of the interlayer insulating film is protruded, voids are hardly generated in the source electrode. COPYRIGHT: (C)2008,JPO&INPIT
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