SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device by which low contact resistance with high reliability is obtained by increasing a contact area and improving adhesiveness between a semiconductor layer and a barrier metal, without increasing an opening area of a contact hole as much as possible, and to provide its manufacturing method. SOLUTION: The semiconductor device includes an N+type source layer 10, the contact hole 102 provided penetrating the N+type source layer 10, and the barrier metal 16 and a contact plug 17 which are formed in the contact hole 102. A tapered portion widening toward an opening face of the contact hole 102 is provided at a side face portion of the contact hole 102 corresponding to the N+type source layer 10. An angle made between its side face portion and a substrate face is made different from an angle made between a side face portion and a substrate face other then the above. COPYRIGHT: (C)2008,JPO&INPIT