发明名称 |
Method for Evaluating Semiconductor Wafer, Apparatus for Evaluating Semiconductor Wafer, and Method for Manufacturing Semiconductor Wafer |
摘要 |
The present invention provides a method for evaluating nanotopography of a surface of a semiconductor wafer sliced from a semiconductor ingot, the method being conducted prior to polishing of the surface, the method at least comprising: measuring a surface profile of the wafer in the direction that the wafer is sliced; determining a maximum inclination value of warp change of the wafer surface in a sectional profile in the direction that the wafer is sliced of the measured surface profile; and estimating nanotopography of the wafer surface after being polished based on the determined maximum value. As a result, there are provided a method and an apparatus for evaluating nanotopography of a surface of a semiconductor wafer, and a method for manufacturing a semiconductor wafer exhibiting good nanotopography level on the surface.
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申请公布号 |
US2008166823(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20060886266 |
申请日期 |
2006.03.24 |
申请人 |
OKABE KEIICHI;TAKANO HISAKAZU;NAKAMATA DAISUKE |
发明人 |
OKABE KEIICHI;TAKANO HISAKAZU;NAKAMATA DAISUKE |
分类号 |
G01B7/28;H01L21/66 |
主分类号 |
G01B7/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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