发明名称 Substrate Processing Apparatus and Producing Method of Semiconductor Device
摘要 A substrate treating apparatus is provided with a treatment chamber, a holding member, a heating member, and supplying members for alternately supplying the treatment chamber with first and second reacting substances. The apparatus is provided for forming a thin film on a substrate by supplying the first reacting substance to have the first reacting substance adsorbed on the substrate, removing the excess first reacting substance, then, supplying the second reacting substance to have it adsorbed on the substrate, and reacting it with the first reacting substance. The apparatus is provided with a control part for permitting the apparatus to perform the thin film forming treatment in a status where the number of product substrates lacks, in the case where the number of sheets of the product substrates held by the holding member is less than the maximum number of the product substrates that can be held by the holding member.
申请公布号 US2008166882(A1) 申请公布日期 2008.07.10
申请号 US20050664726 申请日期 2005.10.05
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MIYA HIRONOBU;SATO TAKETOSHI;MIZUNO NORIKAZU;SAKAI MASANORI;NODA TAKAAKI
分类号 H01L21/02;H01L21/20 主分类号 H01L21/02
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