发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
The invention is directed to a method for manufacturing a semiconductor. The method comprises steps of providing a substrate having a gate structure formed thereon and forming a source/drain extension region in the substrate adjacent to the gate structure. A spacer is formed on the sidewall of the gate structure and a source/drain region is formed in the substrate adjacent to the spacer but away from the gate structure. A bevel carbon implantation process is performed to implant a plurality carbon atoms into the substrate and a metal silicide layer is formed on the gate structure and the source/drain region.
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申请公布号 |
US2008166840(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20070620970 |
申请日期 |
2007.01.08 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TING SHYH-FANN;HUANG CHENG-TUNG;JENG LI-SHIAN;LEE KUN-HSIEN;HUNG WEN-HAN;CHENG TZYY-MING |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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