| 摘要 |
The present invention relates to a vertical-alignment type porous silicon including a first pore 11 which is formed in an upper side of the silicon, a second pore 12 which is formed in a lower side of the first pore 11 and has a diameter that is larger or smaller than a diameter of the first pore 11 , a third pore 13 which is formed in a lower side of the second pore 12 and has a diameter that is identical or similar to the diameter of the first pore 11 , and one or more pore parts 11, 12 , and 13 which includes the first pore 11 , the second pore 12 , and the third pore 13 . A pore part having a double structure is formed in a silicon. Thus, the silicon having an improved surface area can be obtained as compared to a known porous silicon, and since different electronic materials can be implanted into different pores, it is easy to form interfaces of the implanted electronic materials.
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