发明名称 |
ZnO-Kristall, sein Aufwuchsverfahren und ein Herstellungsverfahren für eine Leuchtvorrichtung |
摘要 |
A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the substrate by alternately repeating a Zn-rich condition period and an O-rich condition period; and (c) supplying conductivity type determining impurities above the surface of the substrate while Zn and O are supplied at the step (b). |
申请公布号 |
DE112006002133(T5) |
申请公布日期 |
2008.07.10 |
申请号 |
DE20061102133T |
申请日期 |
2006.08.08 |
申请人 |
STANLEY ELECTRIC CO. LTD. |
发明人 |
KATO, HIROYUKI;SANO, MICHIHIRO |
分类号 |
C30B23/08;C23C14/08;C30B29/16 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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