PLASMA PROCESSING APPARATUS AND METHOD

摘要

A plasma processing apparatus and a plasma processing method are provided to control density and uniformity of magnetic field by equipping a magnetic field control unit in an inside of a chamber. A chamber(100) includes a predetermined space. A substrate supporter(300) is installed at a center of a lower part of the chamber. A substrate is loaded on the substrate supporter. An antenna is formed along an upper outer circumference of the chamber in order to form plasma within the chamber by supplying RF power to the chamber. A magnetic field generation unit(500) includes upper and lower coils to surround an outer circumference of the chamber corresponding to a lower part of the antenna. A magnetic field control unit(600) is formed across a substrate supporting surface of the chamber in order to cover the upper and lower coils and to control the magnetic field of the magnetic field generation unit.