发明名称 MULTILAYER WIRING, LAMINATED ALUMINUM WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a multilayer wiring for enabling finer processes of the wiring layer formed on a connecting plug without influence of concave and convex parts formed by the connecting plug. SOLUTION: The multilayer wiring connecting plug 124 is formed and a barrier metal layer 125-1 and a AlCu layer 125-2 that are formed as the wiring layers 125 are deposited on the plug. After the front surface of the AlCu layer is flattened with CMP, a TiN film 125-3 is formed as a conductive reflection preventing film. Thereafter, a resist 41 is formed to process the wiring layer. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008159651(A) 申请公布日期 2008.07.10
申请号 JP20060343846 申请日期 2006.12.21
申请人 ELPIDA MEMORY INC 发明人 SAITO MASAYOSHI
分类号 H01L21/3205;H01L21/768;H01L23/52 主分类号 H01L21/3205
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