发明名称 |
MULTILAYER WIRING, LAMINATED ALUMINUM WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a multilayer wiring for enabling finer processes of the wiring layer formed on a connecting plug without influence of concave and convex parts formed by the connecting plug. SOLUTION: The multilayer wiring connecting plug 124 is formed and a barrier metal layer 125-1 and a AlCu layer 125-2 that are formed as the wiring layers 125 are deposited on the plug. After the front surface of the AlCu layer is flattened with CMP, a TiN film 125-3 is formed as a conductive reflection preventing film. Thereafter, a resist 41 is formed to process the wiring layer. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008159651(A) |
申请公布日期 |
2008.07.10 |
申请号 |
JP20060343846 |
申请日期 |
2006.12.21 |
申请人 |
ELPIDA MEMORY INC |
发明人 |
SAITO MASAYOSHI |
分类号 |
H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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