| 摘要 |
PROBLEM TO BE SOLVED: To propose a storage device whose storage capacity is not simply linked to the increase of the surface integration density and surface size of memory elements. SOLUTION: This data storage device (100) comprises a stack of layers (4a, 4b) formed by arranging a first layer (4a) with conductivity of about less than 0.01 (Ωcm)<SP>-1</SP>and a second layer (4b) with conductivity of about more than 1 (Ωcm)<SP>-1</SP>alternately, a plurality of pillars (6, 6a, 6b) arranged in the stack of those layers that penetrate the layers (4a, 4b) in this stack, and means to impress voltage on the edge of the foregoing pillars equipped with the network of a movable micro spike (22). Each pillar is fabricated with at least part of semiconductor material (8a, 8b) surrounded by at least one potential storage layer electrically insulated from the part and stack of semiconductor material (10a, 10b). COPYRIGHT: (C)2008,JPO&INPIT
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