发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To correct a voltage at an operation point between a load and a transistor, which form a differential pair. SOLUTION: Differential delay cells DDC 1 to DDC 4, respectively include: load control parts 1; bias sources 2; Nch MOS transistors NMT 11; Nch MOS transistors NMT 12; Pch MOS transistor PMT 11; and a Pch MOS transistor PMT 12. The Nch MOS transistors NMT 11 and NMT 12 form a differential pair for input of input signals. Each load control part 1 monitors the voltage (voltage at the operation point of the differential delay cell) in between the drain of the Pch MOS transistor PMT 12 and the drain of the Nch MOS transistor NMT 12 through the use of an ADC and a comparing part, and corrects the voltage of the operation point. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008160685(A) 申请公布日期 2008.07.10
申请号 JP20060349541 申请日期 2006.12.26
申请人 TOSHIBA CORP 发明人 NAKAGAWA TAKESHI;SHIBAYAMA HIROYUKI
分类号 H03F1/56;H03F3/45 主分类号 H03F1/56
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