| 摘要 |
There is provided a method for simulating ion implantation which includes the steps of calculating an integral value Phi<SUB>a/c </SUB>by integrating concentration distribution of Ge in a test silicon substrate from the thickness of an amorphous layer to infinite, acquiring a form parameter of the Ge concentration distribution in a product silicon substrate by referring to a database, creating a distribution function which approximates the Ge concentration distribution by using the form parameter, and obtaining such a depth that an integral value obtained by integrating the distribution function from the depth to infinite can be equal to the integral value Phi<SUB>a/c</SUB>, and then specifying that the depth is the thickness of an amorphous layer.
|
