发明名称 |
BI-DIRECTIONAL RESISTIVE RANDOM ACCESS MEMORY CAPABLE OF MULTI-DECODING AND METHOD OF WRITING DATA THERETO |
摘要 |
A non-volatile memory device is employed in which data values are determined by the polarities at both ends of a cell, The non-volatile memory device includes a first decoder which decodes a plurality of predetermined bit values of a row address into a first address and is disposed in a row direction of a memory cell array; a second decoder which decodes the other bit values of the row address into a second address and is disposed in a column direction of the memory cell array; and a driver which applies bias voltages to a word line which corresponds to the first address or the second address in accordance with the data values. By including first and second decoders and decoding a row address in two steps, a bi-directional RRAM according to the present invention can perform addressing at high speeds while reducing chip size.
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申请公布号 |
US2008165598(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20070957812 |
申请日期 |
2007.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JOON-MIN;KANG SANG-BEOM;CHO WOO-YEONG;OH HYUNG-ROK |
分类号 |
G11C7/00;G11C11/21 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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