| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having high operability and reliability, and a manufacturing method therefor. SOLUTION: An LDD region 207, formed in an n-channel TFT 302 working as a drive circuit improves resistance with respect hot carrier injection. Furthermore, LDD regions 217 to 220 formed in an n-channel TFT 304 (pixel TFT) forming a pixel section contribute much to reduction of off-current. At this time, the LDD region of the n-channel TFT working as the drive circuit is formed higher in impurity concentration, as it approaches closer to the adjoining drain region.</p> |
