Method of forming a phase change layer by electro-chemical deposition and manufacturing of a storage node and a phase change memory device using the method

摘要

Provided are a method of forming a phase change layer, and methods of manufacturing a storage node, and a phase change memory device using the method. The method of forming a phase change layer uses an electro-chemical deposition (ECD) method, in particular it includes forming an electrolyte (12) by mixing a solvent and precursors, each precursor containing an element of the phase change layer, dipping an anode plate (14) and a cathode plate (16) in the electrolyte to be spaced apart from each other, wherein the cathode plate is a substrate on which the phase change layer is to be deposited, setting deposition conditions of the phase change layer, and supplying a voltage between the anode plate and the cathode plate.