| 摘要 |
<p>A photo lithography mask, an exposing method using the same, and a method for manufacturing substrates for a display device are provided to perform precisely alignment by implementing an alignment window in a mask. A photo lithography mask includes an exposure area(13) and an alignment window(20). The exposure area with a pattern is formed to penetrate beams. The alignment window is formed apart from the exposure area so as to recognize a shape of a specific position of a previous pattern which is formed by previous exposure when an exposure is performed on the exposure area. At least one alignment window(12) is formed around peripheries of the exposure area corresponding to alignment marks of an exposure object.</p> |
