SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION OF THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to prevent etching gas and etching solution from permeating into a lower layer by improving the adhesion characteristics of the lower layer and an etch stop layer. A semiconductor device includes a plug, an etch stop layer(106), a lower electrode(110A), and an adhesion layer(109A). The plug penetrates an interlayer insulation layer(103). The etch stop layer is formed on the interlayer insulation layer so that the plug is exposed. The lower electrode is formed on the plug. The adhesion layer is formed between the lower electrode and the etch stop layer. The adhesion layer is one selected form a group consisting of a ruthenium oxide layer, a platinum oxide layer, an iridium layer, a palladium oxide layer, a rhodium oxide layer, a gold oxide layer, and a silver oxide layer.