METHOD FOR PREPARING ZINC OXIDE-BASED THIN FILM BY SPUTTERING AND ZINC OXIDE-BASED THIN FILM PREPARED THEREBY

摘要

A method for preparing a zinc oxide-based thin film by sputtering is provided to increase electric conductivity of the zinc oxide-based thin film and uniformity of the thin film by controlling an Ar flow rate supplied inside a sputtering chamber at the time of sputtering and minimizing influence of impurity gas such as oxygen or moisture. A method for preparing zinc oxide-based thin film by sputtering is characterized by controlling an Ar flow rate supplied inside a sputtering chamber so that Pdegas+leak/PAr x 100(%) is less than 0.05%. (In this time, PAr is partial pressure of argon gas inside the chamber at the time of sputtering, and Pdegas+leak is partial pressure of impurity gas except argon inside the chamber at the time of sputtering.).