| 摘要 |
Methods and systems are disclosed to inspect a manufactured lithographic mask, to extract physical mask data from mask inspection data, to determine systematic mask error data based on differences between the physical mask data and mask layout data, to generate systematic mask error parameters based on the systematic mask error data, to create an individual mask error model with systematic mask error parameters, to predict patterning performance of the lithographic process using a particular mask and/or a particular projection system, and to predict process corrections that optimize patterning performance and thus the final device yield. |
