BI-DIRECTIONAL RESISTIVE RANDOM ACCESS MEMORY CAPABLE OF MULTI-DECODING AND WRITING METHOD USING THEREOF

摘要

A bi-directional RRAM(Resistive Random Access Memory) capable of multi-decoding and a data writing method using the same are provided to implement more rapid address operation and smaller chip size, by performing multi-decoding by comprising a first decoder and a second decoder. According to a nonvolatile memory device determining a data value according to the polarity of a voltage over both ends of a cell, a first decoder(XDEC) decodes a bit value of a row address with a first address and is located in the row direction of a memory cell array(300). A second decoder(SIEI DEC) decodes the other bit values of the row address with a second address, and is located in the column direction of the memory cell array. A write driver applies a bias voltage according to the data value to a word line corresponding to the first address or the second address. The first address corresponds to a main word line, and the second address corresponds to a local word line.