METHOD FOR FABRICATING THE SAME OF SEMICONDUCTOR DEVICE WITH RECESS GATE,申请号KR20060038994-传众专利搜索

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发明名称	METHOD FOR FABRICATING THE SAME OF SEMICONDUCTOR DEVICE WITH RECESS GATE
摘要
申请公布号	KR100845051(B1)	申请公布日期	2008.07.09
申请号	KR20060038994	申请日期	2006.04.28
申请人		发明人
分类号	H01L21/335;H01L21/336	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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