| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a susceptor for vapor phase epitaxy and a vapor epitaxy growth system capable of effectively preventing sticking from occurring, preventing cracks and breakages in wafer, and improving the productivity of the epitaxial wafer, and to provide a vapor phase epitaxy method. <P>SOLUTION: The susceptor for vapor phase epitaxy places a wafer in the vapor phase growth system. In the susceptor for vapor phase epitaxy, recessed spot facing comprising a wafer placement surface for placing a wafer and a sidewall is formed. In the susceptor for vapor phase epitaxy, the wafer placement surface comprises a center side region, and a peripheral side region where surface roughness is larger than that at the center side region, and the vapor epitaxy growth system has the susceptor. A wafer is placed on the spot facing of the susceptor and a thin film is formed by vapor phase epitaxy on the surface of the wafer. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
