| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor laser device by reducing influences imposed on a light-emitting region by reducing the generation of a stress based on the difference in materials when the material for a ridge portion is different from the material of a current block layer, and to provide a manufacturing method thereof. SOLUTION: The semiconductor laser device has a substrate provided with a first conductive clad layer, an active layer, a second conductive clad layer, a ridge portion formed by machining one part of the second conductive clad layer into a stripe, and a current block layer formed by removing one region of the ridge portion. The device has a stress relaxing portion lower than the ridge portion in height and formed by processing one part of the second conductive clad layer, on the side of the ridge portion. COPYRIGHT: (C)2008,JPO&INPIT
|
