发明名称 MICROELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a microelectronic apparatus that is manufactured by using a high performance/throughput lithography scanner and a method for manufacturing the same. <P>SOLUTION: The method used to manufacture microelectronic equipment, wherein a dummy field on a substrate is exposed by using the lithography scanner at a first speed, a production field on the substrate is exposed by using the lithography scanner at a second speed, and the first speed is substantially greater than the second speed. In a related embodiment, the exposure includes the exposure of a non-critical layer in the equipment using the lithography scanner at the first speed and the exposure of an important layer at the second speed, and the first speed is substantially greater than the second speed. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008205423(A) 申请公布日期 2008.09.04
申请号 JP20070176575 申请日期 2007.07.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 LIN CHIEN-HSUN;YANG AN-KUO;PENG JUI-CHUNG;GUO YAO-WEN
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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