| 摘要 |
<P>PROBLEM TO BE SOLVED: To set up exposure conditions for enhancing an yield of a semiconductor device product. <P>SOLUTION: A dimensional variation of a resist pattern formed in a photolithographic process is separated into an absolute variation factor and a dispersion factor. An absolute variation range is computed from the absolute variation factor, and a dispersion amount expressed by deviation on the assumption of normal distribution is computed from the dispersion factor. The dimensional variation range of the resist pattern is expressed by a trapezoidal approximate distribution by combining the absolute variation range and the dispersion amount. Then, the exposure condition that the dimension of the resist pattern lies in the dimensional variation range expressed by the trapezoidal approximate distribution, and a range wherein the margin width of the exposure amount/focus value at the maximum dimension value in the trapezoidal approximate distribution and the margin width of the exposure amount/focus value at the minimum dimension value therein overlap lies in a predetermined margin width is determined. <P>COPYRIGHT: (C)2008,JPO&INPIT |
