| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of etching a group-III nitride semiconductor that will not have a damaged layer generated, and to provide a manufacturing method of semiconductor device. <P>SOLUTION: A specimen consisting of a p-GaN layer 1, an n-GaN layer 2 and a mask 3 is formed (Fig. 1a). The main surface of the p-GaN layer 1 is a c-face. Then, the specimen placed on a pedestal made of sapphire is subjected to ICP etching using a Cl<SB>2</SB>gas, thereby forming a needle structure 4 (Fig. 1b). Then, the needle structure 4 is removed through wet etching by using a TMAH (tetramethylammonium hydroxide) solution (Fig. 1c). In this way, a damage layer is prevented from being formed on the surface 1a of the exposed p-GaN layer 1. According to these steps, a contact hole can be formed without having to form the damage layer at the bottom surface. <P>COPYRIGHT: (C)2008,JPO&INPIT |
