| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of a wiring resistor by the resistance reduction of a barrier metal and to improve the diffusion barrier property to Cu of the barrier metal. SOLUTION: Lower layer wiring 14 is formed inside an interlayer dielectric 10. On the interlayer dielectric 10 and the lower layer wiring 14, a liner film 20 and an interlayer insulating film 22 are sequentially formed. A via 28 and upper layer wiring 30 are formed inside the liner film 20 and interlayer dielectric 22. The lower layer and upper layer wiring 14 and 30 and the via 28 are provided with the barrier metals 16 and 32 and Cu 18 and 36. The barrier metals 16 and 32 are composed by laminating the films 17A and 34A which are at least one of an Ru<SB>x</SB>Si<SB>n</SB>O<SB>y</SB>film, an Ru<SB>x</SB>O<SB>y</SB>film and an Ru<SB>x</SB>Si<SB>n</SB>film, Ru<SB>x</SB>N<SB>y</SB>films 17B and 34B, and Ru films 17C and 34C. COPYRIGHT: (C)2008,JPO&INPIT
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