| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of improving the electrical characteristics, and to provide a method of manufacturing the semiconductor laser device. SOLUTION: A semiconductor laser device 1 is equipped with a p-type clad layer 6 containing GaN; and a photonic crystal layer 7 which is formed adjacent to the p-type clad layer 6. The photonic crystal layer 7 is provided with an epitaxial layer 2a containing GaN and a low-refractive index layer 2b consisting of AlO<SB>x</SB>. The epitaxial layer 2a has plural openings 2c, and the low-refractive index layer 2b used as a diffraction grating point is embedded in the plural openings 2c. COPYRIGHT: (C)2008,JPO&INPIT
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