| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of a raw gas flowing on a wafer surface and to improve the uniformity of wafer processing and processing quality in a substrate processing apparatus for processing a substrate using plasma. SOLUTION: The apparatus includes a processing chamber 21 for housing the substrate 20 and performing prescribed processing by the plasma, a substrate mounting base 8 provided in the processing chamber for mounting the substrate, exhaust chambers 25 and 26 positioned below the substrate mounting base, and a buffer plate 22 provided so as to surround the periphery of the substrate mounting base and partitioning the exhaust chambers and the processing chamber. The buffer plate is a porous plate where many vent holes are perforated. COPYRIGHT: (C)2008,JPO&INPIT
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