| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a ferroelectric capacitor with excellent and uniform polarization inversion characteristics without raising production cost, and also to provide a manufacturing method therefor. SOLUTION: A ferroelectric film (PZT film) 127 that constitutes a ferroelectric capacitor 130 is formed by a sputtering method, and it is subsequently subjected to thermal processing (RTA) in an oxygen atmosphere. At this time, the amount of oxygen to be supplied into the atmosphere is adjusted according to cumulative time spent for a target during the formation of the ferroelectric film 127. For example, when thermally processing the ferroelectric film 127 that is formed in an early period of lifetime of the target, oxygen supply shall be 40 to 60 sccm, and when thermally processing the ferroelectric film that is formed in a later period of the lifetime, the oxygen supply shall be 70 to 100 sccm. COPYRIGHT: (C)2008,JPO&INPIT
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