PRODUCTION PROCESS OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a process for producing a semiconductor substrate by bonding two semiconductor wafers directly in which generation of voids in the bonding interface is suppressed effectively by optimizing the bonding heat treatment conditions. SOLUTION: The process for producing a semiconductor substrate by bonding two semiconductor wafers directly comprises steps of: sticking a first semiconductor wafer and a second semiconductor wafer; and heat treating of a semiconductor substrate formed in the sticking step at a temperature of 1,000°C-1,400°C and at a temperature rise/fall rate of 100°C/sec or above. COPYRIGHT: (C)2008,JPO&INPIT